A single-phase epitaxially grown ferroelectric perovskite nitride
- Songhee Choi
- Qiao Jin
- Xian Zi
- Dongke Rong
- Jie Fang
- Jinfeng Zhang
- Qinghua Zhang
- Wei Li
- Shuai Xu
- Shengru Chen
- Haitao Hong
- Cui Ting
- Qianying Wang
- Gang Tang
- Chen Ge
- Can Wang
- Zhiguo Chen
- Lin Gu
- Qian Li
- Lingfei Wang
- Shanmin Wang
- Jiawang Hong
- Kuijuan Jin
- Er-Jia Guo
2025-08-08
The integration of ferroelectrics with semiconductors is crucial for developing functional devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories. However, the synthesis of high-quality single-crystalline ferroelectric nitride perovskites has been limited, hindering a comprehensive understanding of their switching dynamics. Here we report the synthesis and characterizations of epitaxial single-phase ferroelectric cerium tantalum nitride (CeTaN 3 ) on both oxides and semiconductors. The polar symmetry of CeTaN 3 was confirmed by observing the atomic displacement of central ions relative to the center of the TaN 6 octahedra, as well as through optical second harmonic generation. We observed switchable ferroelectric domains using piezoresponse force microscopy, complemented by the characterization of square-like polarization–electric field hysteresis loops. The remanent polarization of CeTaN 3 reaches approximately 20 microcoulomb per square centimeter at room temperature, consistent with theoretical calculations. This work establishes a vital link between ferroelectric nitride perovskites and their practical applications, paving the way for next-generation information and energy storage devices.