All-two-dimensional, ion-gating synaptic transistors for high-temperature and ultralow-energy-consumption neuromorphic applications
- Yonghuang Wu
- Xiangpeng Liang
- Ting Pan
- Chenghui Wu
- Wenxin Wang
- Jiayuan Chen
- Ruixuan Peng
- Yuanmin Zhu
- Cheng Zhen
- Run Shi
- Bochen Zhao
- Zonglin Li
- Yiqun Liu
- Zhou Zhu
- Jing Ma
- Meng Danny Gu
- Jianshi Tang
- Kai Liu
2026-07-10
High-temperature intelligent devices operating above 125°C are crucial for applications where cooling is insufficient or impossible. Synaptic transistors, as an intelligent hardware in neuromorphic computing, allow multifunctionality and precise control of channel conductance, but they face challenges in achieving low energy consumption and optimal performance at high temperatures. This study introduces an all-two-dimensional (2D) high-temperature ion-gating synaptic transistor (A2D-HTIGST) using tungsten disulfide (WS 2 ) as the channel, copper indium thiophosphate (CuInP 2 S 6 ) as the ion-gating layer, hexagonal boron nitride (h-BN) as the electron barrier, and graphene as the gate. The A2D-HTIGST demonstrates efficient ion gating, low leakage current, high on/off ratio, pronounced hysteresis, and linear synaptic plasticity at elevated temperatures. Notably, it achieves an energy consumption of under 3 femtojoules per pulse at 200°C, surpassing other high-temperature and nearing room-temperature synaptic devices. The A2D-HTIGST further enables self-powered neuromorphic applications coupled with thermoelectric generators that use waste heat and advances high-temperature reservoir computing for temporal signal processing.