Flash annealing–engineered wafer-scale relaxor antiferroelectrics for enhanced energy storage performance
- Yizhuo Li
- Kepeng Song
- Meixiong Zhu
- Xiaoqi Li
- Zhaowei Zeng
- KangMing Luo
- Yuxuan Jiang
- Zhe Zhang
- Cuihong Li
- Yujia Wang
- Bing Li
- Zhihong Wang
- Zhidong Zhang
- Weijin Hu
2025-11-14
Dielectric capacitors are essential for energy storage systems because of their high-power density and fast operation speed. However, optimizing energy storage density with concurrent thermal stability remains a substantial challenge. Here, we develop a flash annealing process with ultrafast heating and cooling rates of 1000°C per second, which facilitates the rapid crystallization of PbZrO 3 film within a mere second, while locking its high-temperature microstructure to room temperature. This produces compact films with subgrain boundary fractions of 36%, nanodomains of several nanometers, and negligible lead volatilization. These contribute to relaxor antiferroelectric film with a high breakdown strength (4800 kilovolts per centimeter) and large polarization (70 coulombs per square centimeter). Consequently, we have achieved a high energy storage density of 63.5 joules per cubic meter and outstanding thermal stability with performance degradation less than 3% up to 250°C. Our approach is extendable to ferroelectrics like Pb(Zr 0.52 Ti 0.48 )O 3 and on wafer scale, providing on-chip nonlinear dielectric energy storage solutions with industrial scalability.