High-temperature memristors enabled by interfacial engineering
- Jian Zhao
- Cameron S. Jorgensen
- Krishnamurthy Mahalingam
- Cynthia Bowers
- Wataru Sugimoto
- Kai Ito
- Seung Ju Kim
- Ruoyu Zhao
- Yichun Xu
- Han-Ting Liao
- Rajiv K. Kalia
- Aiichiro Nakano
- Kohei Shimamura
- Fuyuki Shimojo
- Priya Vashishta
- Ajit K. Roy
- Ning Ge
- Miao Hu
- R. Stanley Williams
- Qiangfei Xia
- Sabyasachi Ganguli
- J. Joshua Yang
2026-03-26
Non-volatile memories (NVM) that operate reliably at high temperature are essential for electronics in extreme environments. Here, we reported graphene (Gra)/HfO x /tungsten (W) memristors that operated reliably up to 700 °C with an ON/OFF current ratio >10 3 , data retention >50 hours and endurance >10 9 switching cycles. Transmission electron microscopy (TEM) revealed significant W diffusion into the inert platinum (Pt) electrode of conventional Pt/HfO x /W memristors after high-temperature annealing, which was an effect responsible for the thermal failure of conventional devices but not observed in Gra/HfO X /W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on graphene than metals like Pt. These results underscore the critical role of interfacial engineering and potential of 2D materials in enabling reliable high-temperature NVM technologies.