Room-temperature charge localization in ion-coupled bilayer transistors
- Mengyu Gao
- Hanyu Hong
- Sicheng Fan
- Tomojit Chowdhury
- Zehra Naqvi
- Jingyuan Ge
- Ce Liang
- Yu Han
- Nathan P. Guisinger
- Yuqing Qiu
- Dong Hyup Kim
- Suriyanarayanan Vaikuntanathan
- Chong Liu
- Jiwoong Park
2025-10-23
Controlling the localization of mobile charges in solids enables the discovery of correlated physical phenomena, but applying it for the development of next-generation electronics requires achieving such control under practical conditions. In this study, we report room-temperature, switchable charge localization in high-quality bilayer transistors that comprise a monolayer of molecular crystal on top of a monolayer semiconductor. By using an ion gate, we selectively populated either localized molecular states or semiconductor band states, achieving complete localization from mobile charges at densities up to 3 × 10 13 per square centimeter. This transition was energetically stabilized by the formation of coupled electron-ion dipoles, which could be tuned through Coulomb engineering. These properties further enabled single-band ambipolar transistor operation without substitutional dopants, demonstrating the potential of electron-ion correlations for practical electronic applications.