Tailoring tin-based perovskite crystallization via large cations and pseudo-halide anions for high mobility and high stable transistors
- Yanqiu Wu
- Feng Yuan
- Shuzhang Yang
- Enlong Li
- Wunan Wang
- Yu Liu
- Xiaomin Yang
- Jincheng Wen
- Lina Hua
- Yingguo Yang
- Yusheng Lei
- Junhao Chu
- Wenwu Li
2025-08-01
Tin-based perovskites, renowned for their eco-friendliness, intrinsic high hole mobility, and low effective mass, hold great potential for p-type thin-film transistors (TFTs). However, their propensity for rapid crystallization and oxidation severely limits stability and carrier mobility. Here, we strategically enhance perovskite TFT performance by incorporating 2-thiopheneethylamine thiocyanate (TEASCN) into 3D tin-based perovskites. The induction of the pseudo-halide SCN − into a bilayer quasi-2D perovskite intermediate phase, combined with the strong interaction between sulfur-bearing thiophene rings (TEA + ) and Sn-I octahedra, effectively reorients perovskite crystallization while inhibiting Sn 2+ oxidation and reducing trap density. Consequently, TEASCN-based TFTs achieve an average hole mobility of more than 60 square centimeters per volt per second and an on/off current ratio surpassing 10 8 , standing out among state-of-the-art p-type perovskite TFTs. Furthermore, unencapsulated devices preserve 84% of their initial mobility after 30 days in an N 2 atmosphere, underscoring their remarkable stability. This work opens a straightforward path toward high-mobility and highly stable tin-based perovskite transistors.