Wafer-scale SOT-MRAM for analog crossbar array applications
2026-08-28
Analog crossbar arrays consisting of emerging memory devices can alleviate the computational strain required by vector matrix multiplications for neural network applications. The ability to produce spin orbit torque-magnetic random-access memory (SOT-MRAM) at wafer-scale positions SOT-MRAM as a strong memory candidate. In this work, we fabricate and measure 300 mm-compatible SOT-MRAM with 150% tunnel magnetoresistance (TMR) ratio, fast (2 ns) and low voltage (<1 V) operation, low energy dissipation (2 pJ), low write noise (0.1%), and low device-to-device variation of 10%. SOT-MRAM characteristics were shown to be effective for inference on calibrated models. The bi-stable anisotropy and stochastic switching of SOT-MRAM was leveraged for binary neural network training, able to reach ideal accuracy for a single device. Lastly, the devices were evaluated on probabilistic graph modeling and the interplay of TMR ratio and probability distribution is analyzed. Through these results, SOT-MRAM is shown to be a uniquely effective candidate for implementation of crossbar accelerators in memory- and energy-limited applications.